MnBi2Te4 sputtering target - the best choice for high-quality performance! Made from manganese, bismuth, and telluride, this target delivers exceptional results for a wide range of applications. Whether you're working on thin-film deposition or surface engineering, our sputtering target is the perfect solution for your needs.
The MnBi2Te4 sputtering target is the ultimate solution for your deposition needs, offering superior performance, exceptional value, and a wide range of applications. Order now and experience the exceptional benefits of this sputtering target. With its high-quality performance, superior purity, and exceptional uniformity, the MnBi2Te4 sputtering target is the perfect choice for your research and development applications.
MnBi2Te4 Manganese Bismuth Telluride is a unique material that has gained significant attention in recent years for its potential applications in advanced electronic and spintronic devices. As a compound containing manganese, bismuth, and tellurium, MnBi2Te4 exhibits interesting properties such as topological insulating behavior, large magnetoresistance, and high Curie temperature, making it a promising candidate for next-generation electronic and magnetic devices.
One of the key techniques for depositing thin films of MnBi2Te4 is sputtering, a process in which atoms are ejected from a solid target material and deposited onto a substrate to create a thin film coating. MnBi2Te4 sputtering targets are specially designed for use in sputtering systems, allowing for precise deposition of high-quality thin films of MnBi2Te4 on various substrates.
The MnBi2Te4 sputtering target consists of a high-purity material that ensures the deposition of MnBi2Te4 thin films with excellent structural and electrical properties. The target is typically made using advanced manufacturing techniques to achieve the desired composition and microstructure, resulting in consistent and uniform film deposition. Additionally, the sputtering target is available in various sizes and shapes to fit different sputtering systems and requirements.
When used in sputtering processes, the MnBi2Te4 sputtering target enables the creation of thin films with tailored thickness and composition, allowing for precise control over the film properties. The deposited thin films exhibit the unique electronic and magnetic properties of MnBi2Te4, making them suitable for applications in spintronic devices, magnetic memory storage, and topological insulators.
Furthermore, MnBi2Te4 thin films deposited using sputtering techniques offer several advantages, including high uniformity, scalability, and reproducibility. The thin films can be tailored to meet specific requirements for different applications, such as varying film thickness, crystal orientation, and electrical conductivity. This versatility makes MnBi2Te4 sputtering targets a valuable tool for researchers and manufacturers in the development of novel electronic and magnetic devices.
Chemical formula：MnBi2Te4
Storage and transportation conditions：Store in dry place, avoid damp, avoid high temperature
Shape :Disc,Rectangle
Currently our standard round target sizes range from 1" to 20" in diameter, and the rectangular targets are available in lengths up to and over 2000mm in single or multiple piece construction depending on the metal.
Please send us your request with below details to " sales@mdlmaterials.com"
1. Size /Tolerance ( or drawing )
2. Purity
3. Quantity
