We can provide high temperature superconducting thin film substrate, magnetic thin films and ferroelectric thin film substrate, semiconductor crystal, optical crystal, laser crystal materials, at the same time provide orientation, crystal cutting, grinding, polishing and other processing services .
SILICON CARBIDE MATERIAL PROPERTIES
Property | 4H-SiC ,Single Crystal | 6H-SiC ,Single Crystal |
Lattice Parameters | a=3.076Å c=10.053Å | a=3.073Å c=15.117Å |
Stacking Sequence | ABCB | ABCACB |
Mohs Hardness | ≈9.2 | ≈9.2 |
Density | 3.21 g/cm3 | 3.21 g/cm3 |
Therm.Expansion Coefficient | 4-5x10-6/k | 4-5x10-6/k |
Refraction Index @ 750nm | no=2.61 ne=2.66 | no=2.60 ne=2.65 |
Dielectric Constant | c~9.66 | c~9.66 |
Thermal Conductivity (N-Type ,0.02 ohm.cm) | a~4.2 W/cm!K@298K c~3.7 W/cm !K@298K | |
Thermal Conductivity (Semi-insulating) | a~4.9 W/cm!K@298K c~3.9 W/cm! K@298K | a~4.6 W/cm!K@298K c~3.2 W/cm! K@298K |
Band-gap | 3.23 eV | 3.02 eV |
Break-Down Electrical Field | 3-5 x 106 V/cm | 3-5 x 106 V/cm |
Saturation Drift Velocity | 2.0 x 105 m/s | 2.0 x 105 m/s |
Applications
III-V Nitride Deposition
Optoelectronic Devices High-Power Devices
High-Temperature Devices
High-Frequency Power Devices
General Definition
WABCDE-XXX
W -Standard | |
A-Diameter | 2--50.8mm (2 inch) 3--76.2mm (3 inch) 4--100.0mm (4 inch) 6--150.0mm (6 inch) |
B-Polytype | 4--4H 6--6H |
C-Dopant | N--Nitrogen S--Semi-insulating |
D-Orientation | 0--On-axis 4-4°off axis |
E-Grade | Z--Zero MPD P--Proudct R--Research D--Dummy |
X-Si face polishing | L--Lapping P--Optical polish C--CMP,EPI-ready |
X-Carbon face polish | L--Lapping P--Optical polish C--CMP,EPI-ready |
X-Thickness | E--350±25um F--330±25um G--500±25um X--Other thickness |
