We can provide high temperature superconducting thin film substrate, magnetic thin films and ferroelectric thin film substrate, semiconductor crystal, optical crystal, laser crystal materials, at the same time provide orientation, crystal cutting, grinding, polishing and other processing services .
4 inch diameter silicon carbide (SiC) substrate specification
Grade | Zero MPD | Production | Research Grade | Dummy Grade |
Diameter | 100.0mm±0.5mm | |||
Thickness | 4H-N | 350um±25um | ||
4H-SI | 500um±25um | |||
Wafer Orientation | On axis :<0001>±0.5°for 4H-SI Off axis : 4.0°toward<1120>±0.5°for 4H-N | |||
Micropipe Density | ≤1cm-2 | ≤5cm-2 | ≤15cm-2 | ≤50cm-2 |
Resistivity 4H-N 4H-SI | 0.015~0.028Ω!cm | |||
≥1E5Ω!cm | ||||
Primary Flat | {10-10}±5.0° | |||
Primary Flat Length | 32.5mm±2.0mm | |||
Secondary Flat Length | 18.0mm±2.0mm | |||
Secondary Flat Orientation | Silicon face up : 90 °CW from Prime flat ±5.0° | |||
Edge exclusion | 3mm | |||
TTV/Bow/Warp | ≤15um/≤25um/≤40um | |||
Roughness | Polish Ra ≤1nm CMP Ra≤0.5nm | |||
#Cracks by high intensity light | None | 1 allowed ,≤2mm | Cumulative length ≤10mm,single length≤2mm | |
*Hex plates by high intensity light | Cumulative area ≤1% | Cumulative area ≤ 1% | Cumulative area ≤ 3% | |
*Polytype areas by high intensity light | None | Cumulative area ≤ 2% | Cumulative area ≤ 5% | |
*&Scratches by high intensity light | 3 scratches to 1 x wafer diameter cumulative length | 5 scratches to 1 x wafer diameter cumulative length | 5scratches to 1 x wafer diameter cumulative length | |
Edge chip | None | 3 allowed ,≤0.5mm each | 5 allowed ,≤1mm each | |
Contamination by high intensity light | None | |||
Note
*Defects limits apply to entire wafer surface except for the edge exclusion area .
#Defects shall be existed in the edge area ,only defect beyond of the prescribed scope could be considered as reject cause .
&the scratches should be checked on Si face only .
