We can provide high temperature superconducting thin film substrate , magnetic thin films and ferroelectric thin film substrate , semiconductor crystal , optical crystal , laser crystal materials ,at the same time provide orientation and foreign universities and research institutes to provide high quality ( ultra smooth ,ultra smooth , ultra clean)
2 inch GaN wafer
Specifications:
Item | GaN-FS-a | GaN-FS-m |
Dimensions | 5.0mm 5.5mm | |
5.0mm 10.0mm | ||
5.0mm 20.0mm | ||
Customized Size | ||
Thickness | 350 ± 25 μm | |
Orientation | a-plane ± 1° | m-plane ± 1° |
TTV(Total Thickness Variation) | <=15 μm | |
BOW | <=20 μm | |
Conduction Type | N-type | |
Resistivity(300K) | <0.5 Ω .cm | |
Dislocation Density | Less than 5x106 cm-2 | |
Useable Surface Area | > 90% | |
Polishing | Front Surface: Ra < 0.2nm. Epi-ready polished Back Surface: Fine ground | |
Package | Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere. | |
*Other thickness, size and offcut options available
