EN | CN
Home ProductsNewsContact Us
Home / Products / Wafer and Substrates / III-V crystal substrate

2 inch GaN wafer

We can provide high temperature superconducting thin film substrate , magnetic thin films and ferroelectric thin film substrate , semiconductor crystal , optical crystal , laser crystal materials ,at the same time provide orientation and foreign universities and research institutes to provide high quality ( ultra smooth ,ultra smooth , ultra clean)

2 inch GaN wafer

Specifications:

Item
GaN-FS-a
GaN-FS-m
Dimensions
5.0mm 5.5mm
5.0mm 10.0mm
5.0mm 20.0mm
Customized Size
Thickness
350 ± 25 μm
Orientation
a-plane ± 1°
m-plane ± 1°
TTV(Total Thickness Variation)
<=15 μm
BOW
<=20 μm
Conduction Type
N-type
Resistivity(300K)
<0.5 Ω .cm
Dislocation Density
Less than 5x106 cm-2
Useable Surface Area
> 90%
Polishing
Front Surface: Ra < 0.2nm. Epi-ready polished Back Surface: Fine ground
Package
Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

*Other thickness, size and offcut options available

Product Name: 2 inch GaN wafer

Contact Us
  • Tell.: +86 510 8160 3363
  • Fax.: +86 510 8160 3363
  • Skype: adaxier
  • E-mail: sales@mdlmaterials.com
  • Add.: No.6 Xinyuan Road, Jiangyin City, Jiangsu Province, China, 214400.