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Si+SiO2+Ti(TiO2)+Pt Thin Film Wafer

We can provide high temperature superconducting thin film substrate , magnetic thin films and ferroelectric thin film substrate , semiconductor crystal , optical crystal , laser crystal materials ,at the same time provide orientation and foreign universities and research institutes to provide high quality ( ultra smooth ,ultra smooth , ultra clean)

(111) oriented Pt/Ti/SiO2/Si wafer and substrate to be  2"/ 3'/4" p-type <100>

Orientation: 100

Thickness (approx.): Oxide - 300 nm 

                                   Ti - 10 nm

                                   Pt - 100 nm

One side polished


Advantage of Si+SiO2+Ti(TiO2)+Pt Thin Film Wafer

  • Good chemical stability, not easy to oxidize at high temperature

  • The platinum layer has high hardness, low resistance and good weldability

  • After the silicon wafer is coated with platinum, the conductivity is increased, the hardness is increased, and the corrosion resistance is increased. It can be used as an electrical substrate

Si SiO2 Ti(TiO2) Pt Thin Film Wafer

Please send us your request with below details to " sales@mdlmaterials.com" 

1. Size with tolerance  (Diameter / Thickness /layer thickness )

2. Type ( N or P type )

3. Orientation 

4. Electrical resistivity

5. Polishing Side (SSP or DSP )

6. Quantity


Product Name: Si+SiO2+Ti(TiO2)+Pt Thin Film Wafer

Contact Us
  • Tell.: +86 510 8160 3363
  • Fax.: +86 510 8160 3363
  • Skype: adaxier
  • E-mail: sales@mdlmaterials.com
  • Add.: No.6 Xinyuan Road, Jiangyin City, Jiangsu Province, China, 214400.